參數(shù)資料
型號(hào)： MRF5S21045NBR1
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 6/12頁(yè)
文件大小： 510K
代理商： MRF5S21045NBR1
6
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
25
0.1
7th Order
TWOTONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 45 W (PEP), I
DQ
= 500 mA
TwoTone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
30
35
40
45
50
55
1
100
I
Figure 8. Pulse CW Output Power versus
Input Power
40
54
P3dB = 48.17 dBm (65.6 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 500 mA
Pulsed CW, 5
μ
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
52
46
42
30
34
32
36
Actual
Ideal
P1dB = 47.60 dBm (57.5 W)
50
44
48
38
28
P
o
,
I
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
P
out
, OUTPUT POWER (WATTS) AVG.
40
10
20
30
30
40
10
50
1
10
100
20
V
DD
= 28 Vdc, I
DQ
= 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x WCDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
η
D
,
p
,
100
11
17
0.1
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 500 mA
f = 2140 MHz
10
1
16
15
14
13
12
50
40
30
20
10
η
D
,
G
p
,
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
G
p
,
V
DD
= 12 V
16 V
80
6
16
0
50
20
10
8
30
40
12
14
I
DQ
= 500 mA
f = 2140 MHz
T
C
= 30 C
25 C
IM3
η
D
30 C
85 C
85 C
25 C
30 C
85 C
ACPR
25 C
30 C
25 C
G
ps
85 C
T
C
= 30 C
30 C
25 C
85 C
25 C
70
60
10
20 V
24 V
28 V
32 V
85 C
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MRF5S21045NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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