參數(shù)資料
型號: MRF5S21045NBR1
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應晶體管
文件頁數(shù): 3/12頁
文件大小: 510K
代理商: MRF5S21045NBR1
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S21045NR1(NBR1)/MR1(MBR1) Test Circuit Schematic
Z7
Z8, Z13
Z10
Z11
Z12
PCB
0.500
x 1.000
Microstrip
0.270
x 0.080
Microstrip
0.789
x 0.080
Microstrip
0.527
x 0.080
Microstrip
0.179
x 0.080
Microstrip
Taconic TLX8-0300, 0.030
,
ε
r
= 2.55
Z1, Z9
Z2
Z3
Z4
Z5
Z6
0.250
x 0.080
Microstrip
0.987
x 0.080
Microstrip
0.157
x 0.080
Microstrip
0.375
x 0.080
Microstrip
0.480
x 1.000
Microstrip
0.510
x 0.080
Microstrip
C2
C1
R2
V
BIAS
V
SUPPLY
C6
C5
C4
C8
C9
C10
C3
C13
C7
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z13
Z8
Z7
Z12
Z11
Z9
+
DUT
R3
C11
Z10
C12
C15
C14
Table 6. MRF5S21045NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values
Part
Description
C1
220 nF Chip Capacitor (1812)
C2, C3, C7, C12, C13
6.8 pF 100B Chip Capacitors
C4, C5, C14, C15
6.8
μ
F Chip Capacitors (1812)
C6
220
μ
F, 63 V Electrolytic Capacitor, Radial
C8, C10
1 pF 100B Chip Capacitors
C9
1.5 pF 100B Chip Capacitor
C11
0.5 pF 100B Chip Capacitor
R1, R2
10 k , 1/4 W Chip Resistors
R3
10 , 1/4 W Chip Resistor
Part Number
Manufacturer
Vishay-Vitramon
ATC
TDK
Philips
ATC
ATC
ATC
1812Y224KXA
100B6R8CW
C4532X5R1H685MT
13668221
100B1R0BW
100B1R5BW
100B0R5BW
相關PDF資料
PDF描述
MPXV7002 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
MPXV7002DP Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
MPXV7002GC6T1 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
MPXV7002GC6U Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
MC9S12DP256CCFU device made up of standard HCS12 blocks and the HCS12 processor core
相關代理商/技術參數(shù)
參數(shù)描述
MRF5S21045NR1 功能描述:射頻MOSFET電源晶體管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21045NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21090HR3 功能描述:射頻MOSFET電源晶體管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S21090HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF5S21090HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs