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參數資料
| 型號： | MR1S16AYS35 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PDSO44 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 |
| 文件頁數： | 16/22頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MR1S16AYS35 |
Electrical Specifications
MR0A16A Advanced Information Data Sheet, Rev. 2
Freescale Semiconductor
3
Electrical Specifications
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to
avoid application of any magnetic field more intense than the maximum field intensity specified in the
maximum ratings.
Table 2. Operating Modes
E1
G1
W1
LB1
UB1
Mode
VDD
Current
DQL[7:0]2
DQU[15:8]2
H
XXXX
Not selected
ISB1, ISB2
Hi-Z
L
H
X
Output disabled
IDDR
Hi-Z
L
X
H
Output disabled
IDDR
Hi-Z
L
H
L
H
Lower byte read
IDDR
DOut
Hi-Z
L
H
L
Upper byte read
IDDR
Hi-Z
DOut
L
H
L
Word read
IDDR
DOut
L
X
L
H
Lower byte write
IDDW
DIn
Hi-Z
L
X
L
H
L
Upper byte write
IDDW
Hi-Z
DIn
L
X
LLL
Word write
IDDW
DIn
NOTES:
1
H = high, L = low, X = don’t care
2
Hi-Z = high impedance
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