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參數(shù)資料
| 型號： | MMDFS3P303R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts |
| 中文描述： | 3500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MMDFS3P303R2 |
MMDFS3P303
http://onsemi.com
2
SCHOTTKY RECTIFIER MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
30
Volts
Average Forward Current (Note 3.)
(Rated VR) TA = 100
°
C
IO
3.0
Amps
Peak Repetitive Forward Current (Note 3.)
(Rated VR, Square Wave, 20 kHz) TA = 105
°
C
Ifrm
6.0
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Ifsm
30
Amps
THERMAL CHARACTERISTICS – SCHOTTKY AND MOSFET
Thermal Resistance – Junction–to–Ambient (Note 4.) – MOSFET
RJA
RJA
RJA
RJA
201
°
C/W
Thermal Resistance – Junction–to–Ambient (Note 5.) – MOSFET
105
Thermal Resistance – Junction–to–Ambient (Note 3.) – MOSFET
62.5
Thermal Resistance – Junction–to–Ambient (Note 4.) – Schottky
197
Thermal Resistance – Junction–to–Ambient (Note 5.) – Schottky
RJA
RJA
97
Thermal Resistance – Junction–to–Ambient (Note 3.) – Schottky
62.5
Operating and Storage Temperature Range
3. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided), Steady State.
Tj, Tstg
–55 to 150
°
C
MOSFET ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted) (Notes 1. & 6.)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
V(BR)DSS
30
–
–
27
–
–
Vdc
mV/
°
C
Zero Gate Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
–
–
–
–
1.0
10
μ
Adc
Gate Body Leakage Current
(VGS =
±
20 Vdc, VDS = 0)
IGSS
–
–
100
nAdc
ON CHARACTERISTICS
(Note 6.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.7
3.5
–
–
Vdc
mV/
°
C
Static Drain–Source Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
–
–
0.085
0.130
0.100
0.160
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
gFS
–
5.0
–
mhos
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
–
405
–
pF
Output Capacitance
–
200
–
Reverse Transfer Capacitance
–
55
–
SWITCHING CHARACTERISTICS
(Note 7.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
–
12.5
25
ns
Rise Time
(VDD = 20 Vdc, ID = 2.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.0
RG 6.0
)
–
16
30
Turn–Off Delay Time
–
50
90
Fall Time
–
35
65
1. Negative signs for P–Channel device omitted for clarity.
6. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
7. Switching characteristics are independent of operating junction temperature.
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