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參數(shù)資料
| 型號： | MMDFS3P303 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts |
| 中文描述： | 功率MOSFET 3安培，30伏特 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MMDFS3P303 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MMDFS3P303/D
MMDFS3P303
Power MOSFET
3 Amps, 30 Volts
P–Channel SO–8, FETKY
The FETKY product family incorporates low RDS(on), MOSFETs
packaged with industry leading, low forward drop, low leakage
Schottky Barrier rectifiers to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications
such as Buck Converter, Buck–Boost, Synchronous Rectification,
Low Voltage Motor Control, and Load Management in Battery Packs,
Chargers, Cell Phones and other Portable Products.
Power MOSFET with Low VF, Low IR Schottky Rectifier
Lower Component Placement and Inventory Costs along with
Board Space Savings
R2 Suffix for Tape and Reel (2500 units/13
″
reel)
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
Applications Information Provided
Marking: 3P303
MOSFET MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
(Notes 1. & 2.)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M )
Gate–to–Source Voltage – Continuous
30
Vdc
20
Vdc
Drain Current
– Continuous @ TA = 25
°
C
– Continuous @ TA = 100
°
C
– Single Pulse (tp
10 s)
ID
ID
IDM
3.5
2.25
12
Adc
Apk
Total Power Dissipation @ TA = 25
°
C
(Note 3.)
PD
2.0
Watts
Single Pulse Drain–to–Source Avalanche
Energy – STARTING TJ = 25
°
C
VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc,
IL = 9.0 Apk, L = 10 mH, RG = 25
1. Negative sign for P–channel device omitted for clarity.
2. Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2.0%.
3. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided),
10 sec. max.
EAS
375
mJ
Anode
1
2
3
4
8
7
6
5
Top View
Anode
Source
Gate
Cathode
Cathode
Drain
Drain
Device
Package
Shipping
ORDERING INFORMATION
MMDFS3P303R2
SO–8
2500 Tape & Reel
http://onsemi.com
D
S
G
P–Channel
SO–8
CASE 751
STYLE 18
LYWW
MARKING
DIAGRAM
6N303
L
Y
WW
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
1
8
3 AMPERES
30 VOLTS
RDS(on) = 100 m
VF = 0.42 Volts
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDFS3P303-D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDFS3P303R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMDJ3N03BJT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications |
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
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