參數(shù)資料
型號： MMDFS3P303
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 3 Amps, 30 Volts
中文描述： 功率MOSFET 3安培，30伏特
文件頁數(shù)： 3/12頁
文件大?。?/td> 166K
代理商： MMDFS3P303
MMDFS3P303
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS
– continued
(TJ = 25
°
C unless otherwise noted) (Notes 1. & 6.)
Characteristics
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS – continued
(Note 7.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
–
19
–
ns
Rise Time
(VDD = 20 Vdc, ID = 2.0 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 6.0
RG 6.0
)
–
36
–
Turn–Off Delay Time
–
27
–
Fall Time
–
31
–
Gate Charge
QT
Q1
Q2
Q3
–
14
25
nC
(VDS = 20 Vdc, ID = 3.5 Adc,
(VDS 20 Vdc, ID 3.5 Adc,
VGS = 10 Vdc)
–
1.8
–
–
4.5
–
–
2.85
–
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On–Voltage (Note 6.)
(IS = 1.7 Adc, VGS = 0 Vdc)
VSD
trr
ta
tb
–
0.9
1.2
V
Reverse Recovery Time
–
26.6
–
ns
(VGS= 0 V IS= 3 5 A
(VGS = 0 V, IS = 3.5 A,
dIS/dt = 100 A/
μ
s)
–
18.8
–
–
7.8
–
Reverse Recovery Stored
Charge
QRR
–
0.03
–
μ
C
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Maximum Instantaneous Forward Voltage (Note 6.)
IF = 100 mAdc
IF = 3.0 Adc
IF = 6.0 Adc
VF
TJ = 25
°
C
0.28
0.42
0.50
TJ = 125
°
C
0.13
0.33
0.45
Volts
g (
Maximum Instantaneous Reverse Current (Note 6.)
VR = 30 V
IR
TJ = 25
°
C
250
TJ = 125
°
C
–
A
–
25
mA
Maximum Voltage Rate of Change
VR = 30 V
dV/dt
10,000
V/ s
1. Negative signs for P–Channel device omitted for clarity.
6. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
7. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù)
參數(shù)描述
MMDFS3P303-D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts
MMDFS3P303R2 制造商:Rochester Electronics LLC 功能描述:- Bulk
MMDFS6N303R2 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
MMDJ3N03BJT 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications
MMDJ3P03BJT 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES
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