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參數(shù)資料
| 型號： | MMDF1N05ER2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual |
| 中文描述： | 2 A, 50 V, 0.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 83K |
| 代理商： | MMDF1N05ER2G |
MMDF1N05E
http://onsemi.com
4
0
V
GS
V
DS
C
iss
C
oss
16
10
6
0
12
10
8
6
4
2
0
Q
g
, TOTAL GATE CHARGE (nC)
V
Figure 7. Capacitance Variation
2
4
8
12
14
Figure 8. Gate Charge versus
GateToSource Voltage
1200
1000
800
600
400
020
10
0
20
C
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
200
15
5
5
10
15
V
DS
= 25 V
I
D
= 1.2 A
V
DS
= 0
C
iss
C
rss
C
rss
V
GS
= 0
T
J
= 25
°
C
25
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area
The FBSOA curves define the maximum draintosource
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25
°
C
and a maximum junction temperature of 150
°
C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves. ON
Semiconductor Application Note, AN569, “Transient
Thermal Resistance General Data and Its Use” provides
detailed instructions.
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
0.1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2
″
sq. FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with one die operating, 10s max.
100 s
10 s
Figure 10. Thermal Response
t, TIME (s)
R
T
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0175
0.0710
0.2706
0.5776
0.7086
107.55 F
1.7891 F
0.3074 F
0.0854 F
0.0154 F
Chip
Ambient
Normalized to ja at 10s.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
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