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參數(shù)資料
| 型號： | MMDF1N05ER2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual |
| 中文描述： | 2 A, 50 V, 0.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 83K |
| 代理商： | MMDF1N05ER2G |
MMDF1N05E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
0.1
0
0
7
0
2
4
6
10
8
6
4
2
I
10
8
6
4
2
00
2
4
6
8
10
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
Figure 4. OnResistance Variation with Temperature
I
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
R
0
2
4
6
8
I
D
, DRAIN CURRENT (AMPS)
T
J
, JUNCTION TEMPERATURE (
°
C)
50
0
50
100
150
1.8
1.6
1.2
0.8
0.4
0
R
(
V
GS
= 10 V
0.2
0.3
0.4
0.5
100
°
C
25
°
C
55
°
C
4 V
1
3
5
8
V
GS
= 10 V
I
D
= 1.5 A
T
J
= 25
°
C
5 V
6 V
25
°
C
0.2
0.6
1
1.4
25
25
75
125
8 V
4.5 V
10 V
55
°
C
25
°
C
100
°
C
55
°
C
V
GS
= 3.5 V
V
DS
≥
10 V
100
°
C
Figure 5. On Resistance versus
GateToSource Voltage
Figure 6. Gate Threshold Voltage Variation
with Temperature
150
125
100
75
50
25
0
25
50
1.2
1.1
1
0.9
0.8
0.7
V
T
J
, JUNCTION TEMPERATURE (
°
C)
V
DS
= V
GS
I
D
= 1 mA
0.5
0.4
0.3
0.2
02
3
T
J
, JUNCTION TEMPERATURE
I
D
= 1.5 A
V
GS
= 0
0.1
4
5
6
7
8
9
10
R
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
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