參數(shù)資料
型號(hào)： MMBT2369
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： NPN Switching Transistor
中文描述： 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： SOT-23, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 121K
代理商： MMBT2369
MMBT2369
/
PN2369
—
NPN
Switching
T
ransistor
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0
2
Electrical Characteristics T
a = 25°C unless otherwise noted
* Pulse Test: Pulse Width 300ms, Duty Cycle 2.0%
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 10mA, IB = 0
15
V
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 10μA, VBE = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10μA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10μA, IC = 0
4.5
V
ICBO
Collector Cutoff Current
VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C
0.4
30
μA
On Characteristics
hFE
DC Current Gain *
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V
40
20
120
VCE(sat)
Collector-Emitter Saturation Voltage *
IC = 10mA, IB = 1.0mA
0.25
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
0.7
0.85
V
Small Signal Characteristics
Cobo
Output Capacitance
VCB = 5.0V, IE = 0, f = 1.0MHz
4.0
pF
Cibo
Input Capacitance
VEB = 0.5V, IC = 0, f = 1.0MHz
5.0
pF
hfe
Small -Signal Current Gain
IC = 10mA, VCE = 10V, RG = 2.0kΩ,
f = 100MHz
5.0
Switching Characteristics
ts
Storage Time
IB1 = IB2 = IC = 10mA
13
ns
ton
Turn-On Time
VCC = 3.0V, IC = 10mA, IB1 = 3.0mA
12
ns
toff
Turn-Off Time
VCC = 3.0V, IC = 10mA, IB1 = 3.0mA,
IB2 = 1.5mA
18
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2369 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR, NPN, 15V
MMBT2369_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Switching Transistor
MMBT2369_Q 功能描述:兩極晶體管 - BJT NPN HIGH SPD SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2369A 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2369A 制造商:Fairchild Semiconductor Corporation 功能描述:RF BIPOLAR TRANSISTOR ROHS COMPLIANT:NO
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