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參數(shù)資料
| 型號： | MMBTH10RG |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN RF Transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | MMBTH10RG |
2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
MMBTH
1
0
RG
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%
Thermal Characteristics T
a=25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol
Parameter
Ratings
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current
- Continuous
50
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage *
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 A, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 1.0 A, IC = 0
4.0
V
ICBO
Collector Cutoff Current
VCB = 30 V, IE = 0
100
nA
On Characteristics
hFE
DC Current Gain
IC = 1.0 mA, VCE = 6.0 V
50
120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 5.0 mA
0.2
V
Small Signal Characteristics
fT
Current Gain - Bandwidth Product
IC = 2.0 mA, VCE = 10 V,
f = 100 MHz
450
MHz
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.6
pF
rb’Cc
Collector Base Time Constant
IC = 5.0 mA, VCB = 10 V,
f = 79.8 MHz
12
pS
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
225
1.8
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
556
°C/W
MMBTH10RG
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers, with
collector currents in the 100
A to 20 mA range in common emitter or
common base mode of operations, and in low frequency drift, high
output UHF oscillators.
Sourced from process 42.
SOT-23
B
E
C
Mark: 3E
1. Base 2. Emitter 3. Collector
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| MMBTH10RG_Q | 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTH10-TP | 功能描述:TRANS RF NPN 650MHZ 25V SOT23 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| MMBTH11 | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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