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參數(shù)資料
| 型號： | MMBTH34 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | MMBTH34 Surface Mount NPN RF-IF Amp |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | TO-236AB, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | MMBTH34 |
2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
MMBTH
3
4
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300s, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6”
× 1.6” × 0.06"
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector current
- Continuous
50
mA
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage *
IC = 1.0mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100A, IE = 0
40
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10A, IC = 0
4.0
VV
ICBO
Collector Cutoff Current
VCB = 30V, IE = 0
50
nA
On Characteristics
hFE
DC Current Gain
IC = 20mA, VCE = 2V
15
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 15mA, VCE = 10V,
f = 100MHz
500
MHz
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
°C/W
RθJA
Thermal Resistance, Junction to Ambient
556
°C/W
MMBTH34
NPN General Purpose Amplifier
This device is designed for common-emitter low noise amplifier and
mixer applications with collector currents in the 100mA to 20mA range
to 300MHz, and low frequency drift common-base VHF oscillator
applications with high output levels for driving FET mixers.
Sourced from process 47.
See MPSH11 for characteristics.
SOT-23
1
2
3
Mark: 3K
1. Base 2. Emitter 3. Collector
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTH34_Q | 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTH81 | 功能描述:射頻雙極小信號晶體管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MMBTH81 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor |
| MMBTH81_D87Z | 功能描述:射頻雙極小信號晶體管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MMBTH81_Q | 功能描述:兩極晶體管 - BJT PNP RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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