STATIC ELECTRICAL CHARACTERISTICS HALF-BRID" />
參數(shù)資料
型號(hào)： MM908E621ACDWBR2
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 4/60頁(yè)
文件大?。?/td> 0K
描述： IC SW QUAD HB/TRPL HISID 54-SOIC
標(biāo)準(zhǔn)包裝： 1,000
應(yīng)用： 自動(dòng)鏡像控制
核心處理器： HC08
程序存儲(chǔ)器類(lèi)型： 閃存（16 kB）
控制器系列： 908E
RAM 容量： 512 x 8
接口： SCI，SPI
輸入/輸出數(shù)： 12
電源電壓： 9 V ~ 16 V
工作溫度： -40°C ~ 85°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 54-BSSOP（0.295"，7.50mm 寬）裸露焊盤(pán)
包裝： 帶卷 (TR)
供應(yīng)商設(shè)備封裝： 54-SOICW-EP
Analog Integrated Circuit Device Data
12
Freescale Semiconductor
908E621
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
HALF-BRIDGE OUTPUTS HB3 AND HB4
Switch On Resistance
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
RDS(ON)-HB34
–
275
325
m
Ω
Over-current Shutdown
High Side
Low Side
IHBOC34
4.8
–
7.2
A
Over-current Shutdown blanking time(21)
tOCB
–4-8
–
μs
Switching Frequency(21)
fPWM
––
25
kHz
Freewheeling Diode Forward Voltage
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
VHSF
VLSF
–
0.9
–
V
Leakage Current
ILEAKHB
–<0.2
10
A
Low Side Current to Voltage Ratio(22)
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 500 mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 2.0 A)
CRRATIOHB34
3.5
0.7
5.0
1.0
6.5
1.3
V/A
SWITCHABLE VDD OUTPUT HVDD
Over-current Shutdown
IHVDDOC
25
35
50
mA
Over-current Shutdown Blanking Time(23)
HVDDT1:0 = 00
HVDDT1:0 = 01
HVDDT1:0 = 10
HVDDT1:0 = 11
tHVDDOCB
–
950
536
234
78
–
s
Over-current Flag Delay(23)
tHVDDOCFD
–0.5
–
ms
Dropout Voltage @ ILOAD = 20 mA
VHVDDDROP
–110
300
mV
VSUP DOWN SCALER(24)
Voltage Ratio (RATIO VSUP = VSUP / VADOUT)RATIOVSUP
4.75
5.0
5.25
–
INTERNAL DIE TEMPERATURE SENSOR(24)
Voltage / Temperature Slope(23)
STTOV
–26
–
mV/°C
Output Voltage @25°C
VT25
1.7
1.9
2.1
V
Notes
21.
This parameter is guaranteed by process monitoring but is not production tested.
22.
This parameter is guaranteed only if correct trimming was applied
23.
This parameter is guaranteed by process monitoring but is not production tested.
24.
This parameter is guaranteed only if correct trimming was applied
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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