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參數(shù)資料
| 型號(hào)： | MJE18002BA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 45/65頁 |
| 文件大?。?/td> | 409K |
| 代理商： | MJE18002BA |
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MJE18002 MJF18002
3–708
Motorola Bipolar Power Transistor Device Data
0.01
0.10
1.00
10.00
10
100
1000
60
80
100
120
140
160
180
5
6789
10
11
12
13
14
15
0
0.2
0.4
0.6
0.8
1.0
20
40
60
80
100
120
140
160
POWER
D
ERA
T
ING
FA
CT
OR
0
0.5
1.0
1.5
2.0
2.5
0
200
400
600
800
1000
1200
50
70
90
110
130
150
170
190
210
230
250
5
6789
10
11
12
13
14
15
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
on TC = 25°C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25°C. Second break-
down limitations do not derate the same as thermal limita-
tions. Allowable current at the voltages shown on Figure 15
may be found at any case temperature by using the appropri-
ate curve on Figure 17. TJ(pk) may be calculated from the
data in Figures 20 and 21. At any case temperatures, thermal
limitations will reduce the power that can be handled to val-
ues less the limitations imposed by second breakdown. For
inductive loads, high voltage and current must be sustained
simultaneously during turn–off with the base to emitter junc-
tion reverse biased. The safe level is specified as a reverse
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode.
t fi
,F
ALL
T
IME
(
ns)
T
C
,CROSS-OVER
TIME
(ns)
I C
,C
OLLE
CT
OR
C
URREN
T
(AMPS
)
I C
,COLLECT
OR
CURRENT
(AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
56
78
9
10
11
12
13
14
15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
IC = 1 A
56
7
8
9
10
11
12
13
14
15
hFE, FORCED GAIN
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
IC = 1 A
IC = 0.4 A
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
1
s
10
s
50
s
1ms
5ms
DC (MJE18002)
DC (MJF18002)
0
200
400
600
800
1000
1200
Figure 16. Reverse Bias Switching Safe
Operating Area
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 H
VBE(off) = 0.5 V
0 V
–1.5 V
20
40
60
80
100
120
160
140
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
SECOND
BREAKDOWN
DERATING
THERMAL
DERATING
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE18002BG | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002AF | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002AK | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002BC | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004BD | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE18002D2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJE18002G | 功能描述:兩極晶體管 - BJT 2A 450V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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