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參數(shù)資料
| 型號(hào)： | MJE18004BD |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/66頁 |
| 文件大?。?/td> | 504K |
| 代理商： | MJE18004BD |
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3–715
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. This high voltage/high speed transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125_C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF18004, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol
MJE18004
MJF18004
Unit
Collector–Emitter Sustaining Voltage
VCEO
450
Vdc
Collector–Emitter Breakdown Voltage
VCES
1000
Vdc
Emitter–Base Voltage
VEBO
9.0
Vdc
Collector Current — Continuous
— Peak(1)
IC
ICM
5.0
10
Adc
Base Current — Continuous
— Peak(1)
IB
IBM
2.0
4.0
Adc
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H.
Test No. 2 Per Fig. 22b
< 30%, TA = 25_C)
Test No. 3 Per Fig. 22c
VISOL
—
4500
3500
1500
Volts
Total Device Dissipation
(TC = 25_C)
Derate above 25
_C
PD
75
0.6
35
0.28
Watts
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18004
MJF18004
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.65
62.5
3.55
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
260
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
—
—
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 25_C)
(TC = 125_C)
Collector Cutoff Current (VCE = 800 V, VEB = 0)
(TC = 125_C)
ICES
—
—
100
500
100
Adc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
—
—
100
Adc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18004
MJF18004
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
*Motorola Preferred Device
*
CASE 221A–06
TO–220AB
MJE18004
CASE 221D–02
ISOLATED TO–220 TYPE
MJF18004
REV 3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE18004D2 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18006 | 功能描述:兩極晶體管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18006G | 功能描述:兩極晶體管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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