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參數(shù)資料
| 型號： | MJD50 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Power Transistors(高電壓功率晶體管) |
| 中文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MJD50 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 7
1
Publication Order Number:
MJD47/D
MJD47, MJD50
Preferred Device
High Voltage Power
Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier,
SWITCHMODE
power supply drivers and other switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Electrically Similar to Popular TIP47, and TIP50
250 and 400 V (Min) V
CEO(sus)
1 A Rated Collector Current
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
MJD47
MJD50
V
CEO
250
400
Vdc
CollectorBase Voltage
MJD47
MJD50
V
CB
350
500
Vdc
EmitterBase Voltage
V
EB
I
C
5
Vdc
Collector Current
Continuous
Peak
1
2
Adc
Base Current
I
B
P
D
0.6
mAdc
Total Power Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
15
0.12
W
W/
°
C
Total Power Dissipation (Note 1)
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
1.56
0.0125
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
°
C/W
Thermal Resistance JunctiontoCase
R
JC
R
JA
8.33
Thermal Resistance JunctiontoAmbient
(Note 1)
80
Lead Temperature for Soldering Purpose
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
T
L
260
°
C
NPN SILICON POWER
TRANSISTORS
1 AMPERE
250, 400 VOLTS, 15 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
Preferred
devices are recommended choices for future use
and best overall value.
Y
WW
Jxx
= Year
= Work Week
= Device Code
xx = 47 or 50
= PbFree Package
G
1 2
3
4
YWW
JxxG
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJD50_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
| MJD50-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| MJD50G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4 | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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