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參數(shù)資料
| 型號(hào)： | MJB45H11T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors |
| 中文描述： | 10 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 418B-04, D2PAK-3 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | MJB45H11T4 |
MJB44H11 (NPN), MJB45H11 (PNP)
http://onsemi.com
3
Figure 1. Thermal Response
t, TIME (ms)
0.01
0.01
0.05
1.0
2.0
5.0
10
20
50
500
1.0 k
0.1
0.5
0.2
1.0
0.7
0.2
0.1
0.05
r
Z
θ
JC(t)
= r(t) R
θ
JC
R
θ
JC
= 1.56
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
θ
JC(t)
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
R
0.5
D = 0.5
0.05
0.3
0.07
0.03
0.02
0.02
100
200
0.1
0.02
0.01
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
100
1.0
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
5.0
10
T
C
≤
70
°
C
DUTY CYCLE
≤
50%
I
2.0
3.0
20
30
50
100
1.0
7.0
70
1.0
μ
s
dc
0.1
0.2
0.3
0.5
2.0
3.0
5.0
10
20
30
50
10
μ
s
100
μ
s
1.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150
°
C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. Power Derating
0
T, TEMPERATURE (
°
C)
0
40
60
100
120
160
40
T
C
20
60
P
0
2.0
T
A
1.0
3.0
80
140
T
C
T
A
20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJB45H11T4G | 功能描述:兩極晶體管 - BJT 8A 80V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJB47166901 | 制造商:LG Corporation 功能描述:Stopper |
| MJB56852702 | 制造商:LG Corporation 功能描述:STOPPER |
| MJB5742T4G | 功能描述:達(dá)林頓晶體管 BIP D2PAK XSTR TR RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJB61861801 | 制造商:LG Corporation 功能描述:Stopper,Compressor |
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