參數(shù)資料
型號： MJF31C
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
中文描述： 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, CASE 221D-03, TO-220, FULL PACK-3
文件頁數(shù)： 1/8頁
文件大?。?/td> 90K
代理商： MJF31C
MJF31C* (NPN),
MJF32C* (PNP)
*Preferred Devices
Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications
Designed for use in general purpose amplifier and switching
applications.
Collector–Emitter Saturation Voltage –
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector–Emitter Sustaining Voltage –
VCEO(sus) = 100 Vdc (Min)
High Current Gain – Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
UL Recognized, File #E69369, to 3500 VRMS Isolation
IB
PD
Continuous
1.0
3.0
Adc
Base Current
Derate above 25 C
Total Power Dissipation
0.22
W/ C
Watts
@ TA = 25 C
2.0
Watts
Load Energy (Note 1)
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100
..
Temperature Range
+150
http://onsemi.com
3.0 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
28 WATTS
Preferred
devices are recommended choices for future use
and best overall value.
MJF3xC = Specific Device Code
x
= 1 or 2
Y
= Year
WW
= Work Week
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
TO–220 FULLPAK
CASE 221D–02
MJF3xC
YWW
123
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
Semiconductor Components Industries, LLC, 2002
APRIL, 2002 – Rev. 2
1
Publication Order Number:
MJF31C/D
相關(guān)PDF資料
PDF描述
MJF32C 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
MJF44H11 Complementary Power Transistors
MJF45H11 Complementary Power Transistors
MJL21195 STARTER KIT, EASY 500; Output type:Relay; Temp, op. max:55(degree C); Temp, op. min:-25(degree C) RoHS Compliant: Yes
MJL21196 COMPLEMENTARY SILICON POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJF31C_08 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistors
MJF31CG 功能描述:兩極晶體管 - BJT 3A 100V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJF32C 功能描述:兩極晶體管 - BJT 3A 100V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJF32CG 功能描述:兩極晶體管 - BJT 3A 100V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJF36400 制造商:Square D by Schneider Electric 功能描述:MOLDED CASE CIRCUIT BREAKER 600V 400A
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*