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參數(shù)資料
| 型號： | MJ1302A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR |
| 中文描述： | 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 221K |
| 代理商： | MJ1302A |
4
Motorola Bipolar Power Transistor Device Data
PNP MJ1302A
Figure 7. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
10
1.8
1.4
1
TJ = 25
°
C
NPN MJ3281A
Figure 8. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
3.2
0
PNP MJ1302A
Figure 9. Typical Output Characteristics
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
NPN MJ3281A
Figure 10. Typical Output Characteristics
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
12
0
Figure 11. Forward Bias Safe Operating Area (FBSOA)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
10
0.1
100
10
1
1000
1 s
250 ms
V
V
1.6
1.2
11
12
13
14
15
16
17
18
19
20
0
2
4
6
8
10
12
14
16
18
20
TJ = 25
°
C
I
I
20
12
0
16
8
4
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
16
8
4
I
1
TJ = 25
°
C
TJ = 25
°
C
IB = 1 A
0.2 A
IB = 1 A
0.8 A
0.6 A
0.2 A
2.8
2.4
2
1.6
1.2
0.8
0.4
0.8 A
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable op-
eration; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 200
°
C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by se-
cond breakdown.
0.4 A
0.6 A
0.4 A
TYPICAL CHARACTERISTICS
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