參數(shù)資料
型號： MJB44H11
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Card Edge Connector; No. of Contacts:44; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes
中文描述： 10 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, CASE 418B-04, D2PAK-3
文件頁數(shù)： 1/6頁
文件大?。?/td> 75K
代理商： MJB44H11
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 1
1
Publication Order Number:
MJB44H11/D
MJB44H11 (NPN),
MJB45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
D
2
PAK for Surface Mount
. . . for general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, VO @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
80
Vdc
EmitterBase Voltage
V
EB
5
Vdc
Collector Current Continuous
Peak
I
C
10
20
Adc
Total Power Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
50
1.67
Watts
W/
°
C
Total Power Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
2.0
0.016
Watts
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.5
°
C/W
Thermal Resistance, Junction to Ambient
R
θ
JA
75
°
C/W
Device
Package
Shipping
ORDERING INFORMATION
MJB44H11
D
2
PAK
D
2
PAK
CASE 418B
STYLE 1
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
B4xH11
YWW
SILICON POWER
TRANSISTORS
10 AMPERES
80 VOLTS
50 WATTS
Y
WW
B4xH11
x
= Year
= Work Week
= Specific Device Code
= 4 or 5
MJB44H11T4
D
2
PAK
800/Tape & Reel
MJB45H11
D
2
PAK
50 Units/Rail
MJB45H11T4
D
2
PAK
800/Tape & Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
MJB44H11T4 Complementary Power Transistors
MJB45H11 Complementary Power Transistors
MJB45H11T4 Complementary Power Transistors
MJF31C 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
MJF32C 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJB44H11_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors D2PAK for Surface Mount
MJB44H11G 功能描述:兩極晶體管 - BJT 8A 80V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJB44H11T4 功能描述:兩極晶體管 - BJT 8A 80V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJB44H11T4-A 功能描述:TRANS NPN 80V 10A D2PAK-3 制造商:stmicroelectronics 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:10A 電壓 - 集射極擊穿（最大值）:80V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1V @ 400mA，8A 電流 - 集電極截止（最大值）:10μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:40 @ 4A，1V 功率 - 最大值:50W 頻率 - 躍遷:- 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應(yīng)商器件封裝:D2PAK 標(biāo)準(zhǔn)包裝:1
MJB44H11T4G 功能描述:兩極晶體管 - BJT 8A 80V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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