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參數(shù)資料
型號(hào)： MCP47DA1T-A1E/OT
廠商： Microchip Technology
文件頁(yè)數(shù)： 35/54頁(yè)
文件大?。?/td> 0K
描述： IC DGTL POT 30K 1CH SOT-23-6
標(biāo)準(zhǔn)包裝： 1
接片： 65
電阻（歐姆）： 30k
電路數(shù)： 1
溫度系數(shù)： 標(biāo)準(zhǔn)值 150 ppm/°C
存儲(chǔ)器類型： 易失
接口： I²C
電源電壓： 1.8 V ~ 5.5 V，2.7 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： SOT-23-6
供應(yīng)商設(shè)備封裝： SOT-23-6
包裝： 標(biāo)準(zhǔn)包裝
其它名稱： MCP47DA1T-A1E/OTDKR
Micrel, Inc.
KSZ8041NL/RNL
September 2010
40
M9999-090910-1.4
Absolute Maximum Ratings
(1)
Supply Voltage
(VDDPLL_1.8) ............................................... -0.5V to +2.4V
(VDDIO_3.3, VDDA_3.3) ................................... -0.5V to +4.0V
Input Voltage (all inputs) ............................... -0.5V to +4.0V
Output Voltage (all outputs) .......................... -0.5V to +4.0V
Lead Temperature (soldering, 10sec.) ....................... 260°C
Storage Temperature (Ts) ..........................-55°C to +150°C
ESD Rating
(3).................................................................. 6kV
Operating Ratings
(2)
Supply Voltage
(VDDIO_3.3, VDDA_3.3) .......................... +3.135V to +3.465V
Ambient Temperature
(TA , Commercial)...................................... 0°C to +70°C
(TA , Industrial) .......................................-40°C to +85°C
(TA , AM Automotive Qualified) .............-40°C to +85°C
Maximum Junction Temperature (TJ Max) ................. 125°C
Maximum Case Temperature (TC Max)...................... 150°C
Thermal Resistance (
θ
JA) ......................................... 34°C/W
Thermal Resistance (
θ
JC) ........................................... 6°C/W
Electrical Characteristics
(4)
Symbol
Parameter
Condition
Min
Typ
Max
Units
Supply Current
(5)
IDD1
100Base-TX
Chip only (no transformer);
Full-duplex traffic @ 100% utilization
53.0
mA
IDD2
10Base-T
Chip only (no transformer);
Full-duplex traffic @ 100% utilization
38.0
mA
IDD3
Power Saving Mode
Ethernet cable disconnected (reg. 1F.10 = 1)
32.0
mA
IDD4
Power Down Mode
Software power down (reg. 0.11 = 1)
4.0
mA
TTL Inputs
VIH
Input High Voltage
2.0
V
VIL
Input Low Voltage
0.8
V
IIN
Input Current
VIN = GND ~ VDDIO
-10
10
A
TTL Outputs
VOH
Output High Voltage
IOH = -4mA
2.4
V
VOL
Output Low Voltage
IOL = 4mA
0.4
V
|Ioz|
Output Tri-State Leakage
10
A
LED Outputs
ILED
Output Drive Current
Each LED pin (LED0, LED1)
8
mA
100Base-TX Transmit (measured differentially after 1:1 transformer)
VO
Peak Differential Output Voltage
100
Ω termination across differential output
0.95
1.05
V
VIMB
Output Voltage Imbalance
100
Ω termination across differential output
2
%
Rise/Fall Time
3
5
ns
Rise/Fall Time Imbalance
0
0.5
ns
Duty Cycle Distortion
+ 0.25
ns
tr, tf
Overshoot
5
%
VSET
Reference Voltage of ISET
0.65
V
Output Jitter
Peak-to-peak
0.7
1.4
ns
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