參數(shù)資料
型號： MCIMX31VMN5CR2
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 532 MHz, MICROPROCESSOR, PBGA473
封裝： 19 X 19 MM, 0.80 MM PITCH, ROHS COMPLIANT, MAPBGA-473
文件頁數(shù)： 40/122頁
文件大?。?/td> 1418K
代理商： MCIMX31VMN5CR2
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
24
Freescale Semiconductor
Electrical Characteristics
4.3.2
AC Electrical Characteristics
Figure 5 depicts the load circuit for outputs. Figure 6 depicts the output transition time waveform. The
range of operating conditions appears in Table 17 for slow general I/O, Table 18 for fast general I/O, and
Table 19 for DDR I/O (unless otherwise noted).
Figure 5. Load Circuit for Output
Figure 6. Output Transition Time Waveform
Low-level output current
IOL
VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
3.6
7.2
10.8
14.4
——
mA
High-Level DC input voltage
VIH
—
0.7*NVCC
NVCC NVCC+0.3
V
Low-Level DC input voltage
VIL
—
–0.3
0
0.3*NVCC
V
Tri-state leakage current
IOZ
VI = NVCC or GND
I/O = High Z
——
±2
μA
1 Use of DDR Drive can result in excessive overshoot and ringing.
Table 17. AC Electrical Characteristics of Slow1 General I/O
1 Fast/slow characteristic is selected per GPIO (where available) by “slew rate” control. See reference manual.
ID
Parameter
Symbol
Test
Condition
Min
Typ
Max
Units
PA1
Output Transition Times (Max Drive)
tpr
25 pF
50 pF
0.92
1.5
1.95
2.98
3.17
4.75
ns
Output Transition Times (High Drive)
tpr
25 pF
50 pF
1.52
2.75
—4.81
8.42
ns
Output Transition Times (Std Drive)
tpr
25 pF
50 pF
2.79
5.39
—8.56
16.43
ns
Table 16. DDR (Double Data Rate) I/O DC Electrical Parameters (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Test Point
From Output
Under Test
CL
CL includes package, probe and fixture capacitance
0V
NVCC
20%
80%
20%
PA1
Output (at I/O)
Because
of
an
order
from
the
United
States
International
Trade
Commission,
BGA-packaged
product
lines
and
part
numbers
indicated
here
currently
are
not
available
from
Freescale
for
import
or
sale
in
the
United
States
prior
to
September
2010:
i.MX31
Product
Family
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