參數(shù)資料
型號(hào)： MC8610VT800GB
廠商： Freescale Semiconductor
文件頁數(shù)： 88/96頁
文件大?。?/td> 0K
描述： MPU E600 CORE 800MHZ 783-PBGA
標(biāo)準(zhǔn)包裝： 36
系列： MPC86xx
處理器類型： 32-位 MPC86xx PowerPC
速度： 800MHz
電壓： 1V
安裝類型： 表面貼裝
封裝/外殼： 783-BBGA，F(xiàn)CBGA
供應(yīng)商設(shè)備封裝： 783-FCPBGA（29x29）
包裝： 托盤
Hardware Design Considerations
MPC8610 Integrated Host Processor Hardware Specifications, Rev. 2
Freescale Semiconductor
89
modeled as a collapsed thermal resistance with thermal conductivity of 12.1 W/(m K) and an effective height of 0.1 mm. The
thermal model uses median dimensions to reduce grid. Please refer to the case outline for actual dimensions.
The thermal model uses approximate dimensions to reduce grid. The approximations used do not impact thermal performance.
Please refer to the case outline for exact dimensions.
Figure 57. MPC8610 Thermal Model
3.12.2.5
Temperature Diode
The MPC8610 has a temperature diode on the microprocessor that can be used in conjunction with other system temperature
monitoring devices (such as Analog Devices, ADT7461). These devices use the negative temperature coefficient of a diode
operated at a constant current to determine the temperature of the microprocessor and its environment. For proper operation,
the monitoring device used should auto-calibrate the device by canceling out the VBE variation of each MPC8610’s internal
diode.
The following are the specifications of the MPC8610 on-board temperature diode:
Vf > 0.40 V
Vf < 0.90 V
Operating range 2–300
μA
Diode leakage < 10 nA @ 125
°C
Bump and Underfill
Die
Substrate
Solder/Air
Die
Substrate
Side View of Model (Not to Scale)
Top View of Model (Not to Scale)
x
y
z
Conductivity
Value
Unit
Die (8.5 x 9.7 x 0.86mm)
Silicon
Temperature
dependent
Bump and Underfill (8.5
× 9.7 × 0.07 mm)
Collapsed Resistance
kz
8.1
W/(m K)
Substrate (29
× 29 × 1.18 mm)
kx
23.3
W/(m K)
ky
23.3
kz
0.95
Solder and Air (29
× 29 × 0.4 mm)
kx
0.034
W/(m K)
ky
0.034
kz
12.1
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