參數(shù)資料
型號(hào): MBM29DL161BE-90PBT
廠商: FUJITSU LTD
元件分類: PROM
英文描述: 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝: PLASTIC, FBGA-48
文件頁數(shù): 21/76頁
文件大小: 1145K
代理商: MBM29DL161BE-90PBT
MBM29DL16XTE/BE70/90
28
(MBM29DL164TE = 33h and MBM29DL164BE = 35h for
×8 mode; MBM29DL164TE = 2233h and
MBM29DL164BE = 2235h for
×16 mode). These two bytes/words are given in “MBM29DL16XTE/BE Sector
Group Protection Verify Autoselect Codes Tables” and “Expanded Autoselect Code Tables” in sDEVICE BUS
OPERATION. All identifiers for manufactures and device will exhibit odd parity with DQ7 defined as the parity
bit. In order to read the proper device codes when executing the autoselect, A1 must be VIL. (See
“MBM29DL16XTE/BE Sector Group Protection Verify Autoselect Codes Tables” and “Expanded Autoselect Code
Tables” in sDEVICE BUS OPERATION.)
In case of applying VID on A9, since both Bank 1 and Bank 2 enter Autoselect mode, the simultenous operation
cannot be executed.
Write
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The
command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on
the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to “AC Characteristics” in sELECTRICAL CHARACTERISTICS and sTIMING DIAGRAM.
Sector Group Protection
The MBM29DL16XTE/BE feature hardware sector group protection. This feature will disable both program and
erase operations in any combination of 17 sector groups of memory. (See “Sector Group Addresses Tables
(MBM29DL16XTE/BE)” in sFLEXIBLE SECTOR-ERASE ARCHITECTURE). The sector group protection
feature is enabled using programming equipment at the user’s site. The device is shipped with all sector groups
unprotected.
To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest
VID = 11.5 V), CE = VIL and A0 = A6 = VIL, A1 = VIH. The sector group addresses (A19, A18, A17, A16, A15, A14, A13,
and A12) should be set to the sector to be protected. “Sector Address Tables (MBM29DL161TE/BE,
MBM29DL162TE/BE, MBM29DL163TE/BE, MBM29DL164TE/BE)” in sFLEXIBLE SECTOR-ERASE
ARCHITECTURE define the sector address for each of the thirty nine (39) individual sectors, and “Sector Group
Addresses Tables (MBM29DL16XTE/BE)” in sFLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector
group address for each of the seventeen (17) individual group sectors. Programming of the protection circuitry
begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector group
addresses must be held constant during the WE pulse. See “(15) AC Waveforms for Sector Group Protection”
in sTIMING DIAGRAM and “(5) Sector Group Protection Algorithm” in sFLOW CHART for sector group
protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
with CE and OE at VIL and WE at VIH. Scanning the sector group addresses (A19, A18, A17, A16, A15, A14, A13, and
A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” code at device output DQ0 for a protected sector.
Otherwise the device will produce “0” for unprotected sector. In this mode, the lower order addresses, except
for A6, A1, and A0 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer
and device codes. A-1 requires to apply to VIL on byte mode.
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.
Performing a read operation at the address location XX02h, where the higher order addresses (A19, A18, A17, A16,
A15, A14, A13, and A12) are the desired sector group address will produce a logical “1” at DQ0 for a protected sector
相關(guān)PDF資料
PDF描述
MBM29DL163TD12PBT 1M X 16 FLASH 3V PROM, 120 ns, PBGA48
MBM29DL32TF70TN 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
MBM29F800TA-70PFTN-E1 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
MBR-2051-1B5T 51 CONTACT(S), MALE, D MICROMINIATURE CONNECTOR, SOLDER, PLUG
MBR-2069-0A1T 69 CONTACT(S), MALE, D MICROMINIATURE CONNECTOR, SOLDER, PLUG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL161BE-90TN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BE-90TR 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161TD 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161TD-70PBT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161TD-70PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation