參數(shù)資料
型號: MB91F267APMC-GE1
廠商: Fujitsu Semiconductor America Inc
文件頁數(shù): 7/53頁
文件大?。?/td> 0K
描述: IC MCU FLASH 128KB FLASH 64LQFP
標準包裝: 1
系列: FR MB91265A
核心處理器: FR60Lite RISC
芯體尺寸: 32-位
速度: 33MHz
連通性: UART/USART
外圍設備: DMA,WDT
輸入/輸出數(shù): 49
程序存儲器容量: 128KB(128K x 8)
程序存儲器類型: 閃存
RAM 容量: 4K x 8
電壓 - 電源 (Vcc/Vdd): 4 V ~ 5.5 V
數(shù)據(jù)轉換器: A/D 11x8/10b
振蕩器型: 外部
工作溫度: -40°C ~ 105°C
封裝/外殼: 64-LQFP
包裝: 托盤
其它名稱: 865-1092
18
8183F–AVR–06/12
ATtiny24A/44A/84A
The calibrated Oscillator is used to time the EEPROM accesses. Make sure the Oscillator fre-
quency is within the requirements described in “OSCCAL – Oscillator Calibration Register” on
5.3.6
Program Examples
The following code examples show one assembly and one C function for erase, write, or atomic
write of the EEPROM. The examples assume that interrupts are controlled (e.g., by disabling
interrupts globally) so that no interrupts will occur during execution of these functions.
Note:
Assembly Code Example
EEPROM_write:
; Wait for completion of previous write
sbic
EECR, EEPE
rjmp
EEPROM_write
; Set Programming mode
ldi
r16, (0<<EEPM1)|(0<<EEPM0)
out
EECR, r16
; Set up address (r18:r17) in address registers
out
EEARH, r18
out
EEARL, r17
; Write data (r19) to data register
out
EEDR, r19
; Write logical one to EEMPE
sbi
EECR, EEMPE
; Start eeprom write by setting EEPE
sbi
EECR, EEPE
ret
C Code Example
void
EEPROM_write(unsigned int ucAddress, unsigned char ucData)
{
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
;
/* Set Programming mode */
EECR = (0<<EEPM1)|(0<<EEPM0)
/* Set up address and data registers */
EEAR = ucAddress;
EEDR = ucData;
/* Write logical one to EEMPE */
EECR |= (1<<EEMPE);
/* Start eeprom write by setting EEPE */
EECR |= (1<<EEPE);
}
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