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參數(shù)資料
| 型號： | MAX1718EEI |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Notebook CPU Step-Down Controller for Intel Mobile Voltage Positioning IMVP-II |
| 中文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO28 |
| 封裝： | 0.150 INCH, 0.025 INCH PITCH, MO-137AD, QSOP-28 |
| 文件頁數(shù)： | 3/35頁 |
| 文件大?。?/td> | 700K |
| 代理商： | MAX1718EEI |
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M
Notebook CPU Step-Down Controller for Intel
Mobile Voltage Positioning (IMVP-II)
_______________________________________________________________________________________
3
Current-Limit Threshold Voltage
(Zero Crossing)
4
mV
GND - LX
DH Gate Driver On-Resistance
1.0
1.0
0.4
3.5
3.5
1.0
BST - LX forced to 5V
DL, high state (pullup)
DL, low state (pulldown)
Current-Limit Default
Switchover Threshold
3
V
CC
- 1 V
CC
- 0.4
V
T
A
= 0
°
C to +85
°
C
ILIM = 0.5V
85
35
165
115
65
230
T
A
= +25
°
C to +85
°
C
ILIM = REF (2V)
PARAMETER
MIN
TYP
MAX
0.01
UNITS
V
μA
Output Undervoltage Fault
Blanking Time
256
clks
Output Undervoltage Fault
Propagation Delay
10
μs
Output Undervoltage Fault
Protection Threshold
65
70
75
%
Overvoltage Fault Propagation
Delay
10
μs
Current-Limit Threshold Voltage
(Positive, Default)
90
100
110
Current-Limit Threshold Voltage
(Positive, Adjustable)
50
200
mV
REF Sink Current
FAULT PROTECTION
Reference Load Regulation
10
Overvoltage Trip Threshold
1.95
2.00
2.05
V
Current-Limit Threshold Voltage
(Negative)
-140
-117
-95
mV
Thermal Shutdown Threshold
150
°
C
V
CC
Undervoltage Lockout
Threshold
4.1
4.4
V
DL Gate Driver On-Resistance
DH Gate-Driver Source/Sink
Current
1.6
A
DL Gate-Driver Sink Current
4
A
CONDITIONS
LX - GND, ILIM = V
CC
From SKP/
SDN
signal going high, clock speed set by R
TIME
Hysteresis = 10
°
C
FB forced 2% below trip threshold
With respect to unloaded output voltage
FB forced 2% above trip threshold
GND - LX, ILIM = V
CC
Rising edge, hysteresis = 20mV, PWM disabled below
this level
GND - LX
DH forced to 2.5V, BST - LX forced to 5V
I
REF
= 0μA to 50μA
REF in regulation
DL forced to 2.5V
Measured at FB
mV
VGATE Lower Trip Threshold
VGATE Upper Trip Threshold
VGATE Propagation Delay
VGATE Output Low Voltage
VGATE Leakage Current
GATE DRIVERS
-12
+8
-10
+10
10
-8
+12
%
%
μs
V
μA
Measured at FB with respect to unloaded output voltage
Measured at FB with respect to unloaded output voltage
FB forced 2% outside VGATE trip threshold
I
SINK
= 1mA
High state, forced to 5.5V
0.4
1
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V+ = 15V, V
CC
= V
DD
= SKP/
SDN
= 5V, V
OUT
= 1.25V,
T
A
= 0°C to +85°C
, unless otherwise noted.)
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