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參數(shù)資料
| 型號： | MAAMGM0007-DIE |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.118 X 0.065 INCH, 0 003 INCH HEIGHT, DIE |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 318K |
| 代理商： | MAAMGM0007-DIE |
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
Preliminary Datasheet
RO-P-DS-3084 A
Features
0.15 Watt Saturated Output Power Level
Single Bias Operation
Variable Drain Voltage (4-6V) Operation
GaAs MSAG Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAMGM0007-Die is a single stage distributed amplifier
with single bias operation. This product is fully matched to 50
ohms on both the input and output. It can be used as a driver
stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
Parameter
Symbol
Typical
Units
Bandwidth
f
2.0-18.0
GHz
Output Power
POUT
22
dBm
1-dB Compression Point
P1dB
19
dBm
Small Signal Gain
G
8
dB
Noise Figure
NF
6
dB
Input VSWR
VSWR
2.0:1
Output VSWR
VSWR
2.0:1
Drain Supply Current
IDD
< 250
mA
1.
TB = MMIC Base Temperature
Electrical Characteristics: TB = 40°C
1, Z0 = 50, VDD = 5V, Pin = 16 dBm
MAAMGM0007-DIE
Primary Applications
Test Equipment
Electronic Warfare
Radar
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