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參數(shù)資料
| 型號(hào)： | MADP-017015-13140T |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | ROHS COMLPLIANT, CASE ODS-1314, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | MADP-017015-13140T |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
SURMOUNT 15M PIN Diodes
RoHS Compliant
M/A-COM Products
Rev 2
MADP-017015-1314
MADP-030015-1314
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Case Style ODS 1314
Absolute Maximum Ratings
1 @T
AMB = +25°C
(unless otherwise specified)
1) Exceeding these limits may cause in permanent damage
Chip Dimensions
Backside Contacts are Circuit Side
DIM
INCHES
MM
Min
Max
Min
Max
A
0.060
0.062
1.525
1.575
B
0.031
0.032
0.775
0.825
C
0.004
0.008
0.102
0.203
D
0.019
0.021
0.475
0.525
E
0.019
0.021
0.475
0.525
F
0.019
0.021
0.475
0.525
G
0.029
0.031
0.725
0.775
Notes:
1) Backside metal: 0.1microns thick.
2) Yellow area with hatch lines indicate backside ohmic gold
contacts.
3) Both devices have same outline dimensions ( A to G).
Features
0603 Surface Mount 15m I-Region Length Devices
No Wirebonds Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
High Average and Peak Power Handling
Description
This device is a Silicon-Glass PIN diode chip fabricated
with M/A-COM’s patented HMICTM process. This device
features two silicon pedestals embedded in a low loss,
low dispersion glass. The diode is formed on the top of
one pedestal and connections to the backside of the
device are facilitated by making the pedestal sidewalls
electrically conductive. Selective backside metallization
is applied producing a surface mount device. This
vertical topology provides for exceptional heat transfer.
The
topside is fully encapsulated with silicon nitride
and has an additional polymer layer for scratch and
impact
protection. These protective coatings prevent
damage to the junction and the anode air-bridge during
handling and assembly.
Applications
These packageless devices are suitable for usage in
high incident power, 50dBm C.W., and 75dBm,1S,
0.01% duty cycle, peak power applications, when used
as series, shunt, or series-shunt switches. Smaller
parasitic inductance, <0.2nH, and excellent RC
constant, make these devices ideally suited for higher
frequency switch elements compared to their plastic
device counterparts.
Parameter
Absolute Maximum
Forward Current
500 mA
Reverse Voltage
| - 115 V |
Operating Temperature
-55°C to +125°C
Storage Temperature
-55 °C to +150°C
Junction Temperature
+175°C
C.W. Incident Power
50dBm
Mounting Temperature
+260°C for 30 seconds
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