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參數(shù)資料
| 型號： | M50FLW080BN5G |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 1M X 8 FLASH 3V PROM, 11 ns, PDSO40 |
| 封裝： | 10 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-40 |
| 文件頁數(shù)： | 19/64頁 |
| 文件大?。?/td> | 534K |
| 代理商： | M50FLW080BN5G |
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Command interface
M50FLW080A, M50FLW080B
4.2
Read Status Register command
The Read Status Register command is used to read the Status Register. One Bus Write
cycle is required to issue the Read Status Register command. Once the command is issued,
subsequent Bus Read operations read the Status Register until another command is issued.
See the section on the Status Register for details on the definitions of the Status Register
bits.
4.3
Read Electronic Signature command
The Read Electronic Signature command is used to read the Manufacturer Code and the
Device Code. One Bus Write cycle is required to issue the Read Electronic Signature
command. Once the command is issued, the Manufacturer Code and Device Code can be
read using conventional Bus Read operations, and the addresses shown in Table 12.
The device remains in this mode until another command is issued. That is, subsequent Bus
Read operations continue to read the Manufacturer Code, or the Device Code, and not the
Memory Array.
4.4
Program command
The Program command can be used to program a value to one address in the memory array
at a time.
The Program command works by changing appropriate bits from ‘1’ to ‘0’. (It cannot change
a bit from ‘0’ back to ‘1’. Attempting to do so will not modify the value of the bit. Only the
Erase command can set bits back to ‘1’. and does so for all of the bits in the block.)
Two Bus Write operations are required to issue the Program command. The second Bus
Write cycle latches the address and data, and starts the Program/Erase Controller.
Once the command is issued, subsequent Bus Read operations read the value in the Status
Register. (See the section on the Status Register for details on the definitions of the Status
Register bits.)
If the address falls in a protected block, the Program operation will abort, the data in the
memory array will not be changed, and the Status Register will indicate the error.
During the Program operation, the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands are ignored.
See Figure 21, for a suggested flowchart on using the Program command. Typical Program
times are given in Table 18.
Table 12.
Electronic Signature Codes
Code
Address(1)
1.
A22 should be ‘1’, and the ID lines and upper address bits should be set according to the rules illustrated in
Data
Manufacturer Code
...00000h
20h
Device Code
M50FLW080A
M50FLW080B
...00001h
80h
81h
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M50FLW080BN5P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BN5TG | 功能描述:IC FLASH 8MBIT 33MHZ 40TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| M50FLW080BN5TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BNB5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
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