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參數(shù)資料
| 型號(hào)： | M470T5663EH3-CF7 |
| 元件分類： | DRAM |
| 英文描述： | DDR DRAM MODULE, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁數(shù)： | 12/22頁 |
| 文件大?。?/td> | 401K |
| 代理商： | M470T5663EH3-CF7 |
Rev. 1.0 August 2008
SODIMM
DDR2 SDRAM
2 of 22
1.0 DDR2 Unbuffered SODIMM Ordering Information .....................................................................4
2.0 Features .........................................................................................................................................4
3.0 Address Configuration .................................................................................................................4
4.0 Pin Configurations (Front side/Back side) .................................................................................5
5.0 Pin Description .............................................................................................................................5
6.0 Input/Output Function Description .............................................................................................6
7.0 Functional Block Diagram : .........................................................................................................7
7.1 2GB, 256Mx64 Module - M470T5663EH3
...........................................................................................7
7.2 1GB, 128Mx64 Module - M470T2864EH3
...........................................................................................8
7.3 1GB, 128Mx64 Module - M470T2863EH3
...........................................................................................9
7.4 512MB, 64Mx64 Module - M470T6464EHS
....................................................................................... 10
8.0 Absolute Maximum DC Ratings ................................................................................................11
9.0 AC & DC Operating Conditions................................................................................................. 11
9.1 Recommended DC Operating Conditions (SSTL - 1.8)
..................................................................... 11
9.2 Operating Temperature Condition
.................................................................................................12
9.3 Input DC Logic Level
...................................................................................................................12
9.4 Input AC Logic Level
...................................................................................................................12
9.5 AC Input Test Conditions
.............................................................................................................12
10.0 IDD Specification Parameters Definition ................................................................................13
11.0 Operating Current Table : ........................................................................................................14
11.1 M470T5663EH3 : 256Mx64 2GB Module
........................................................................................14
11.2 M470T2864EH3 : 128Mx64 1GB Module
........................................................................................14
11.3 M470T2863EH3: 128Mx64 1GB Module
.........................................................................................15
11.4 M470T6464EHS: 64Mx64 512MB Module
.......................................................................................15
12.0 Input/Output Capacitance ........................................................................................................16
13.0 Electrical Characteristics & AC Timing for DDR2-800/667 ...................................................16
13.1 Refresh Parameters by Device Density
.........................................................................................16
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
..............................................16
13.3 Timing Parameters by Speed Grade
.............................................................................................17
14.0 Physical Dimensions : .............................................................................................................19
14.1 128Mbx8 based 256Mx64 Module (2 Rank)
....................................................................................19
14.2 64Mbx16 based 128Mx64 Module (2 Rank)
.................................................................................... 20
14.3 128Mbx8 based 128Mx64 Module (1 Rank)
................................................................................... 21
14.4 64Mbx16 based 64Mx64 Module (1 Rank)
..................................................................................... 22
Table of Contents
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M470T6464EHS-CE6 | DDR DRAM MODULE, ZMA200 |
| M470T6464EHS-LF7 | DDR DRAM MODULE, ZMA200 |
| M48T128V | 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM |
| M48T12 | 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM |
| M48T12-150PC1 | 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470T5663FB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
| M470T5663FB3-CE600 | 制造商:Samsung Semiconductor 功能描述:SDRAM DDR2, 2GB 333MHZ, 1.8V - Trays |
| M470T5663FB3-CF700 | 制造商:Samsung Semiconductor 功能描述: |
| M470T5663QZ3-CE600 | 制造商:Samsung SDI 功能描述:DRAM Module DDR2 SDRAM 2GByte 200SODIMM |
| M470T5663QZ3-CF700 | 制造商:Samsung SDI 功能描述:DRAM Module DDR2 SDRAM 2GByte 200SODIMM |
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