- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224146 > M45PE10-VMP6TG (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M45PE10-VMP6TG |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 7/34頁 |
| 文件大小： | 454K |
| 代理商： | M45PE10-VMP6TG |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
15/34
M45PE10
Read Data Bytes at Higher Speed
(FAST_READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction
is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the
rising edge of Serial Clock (C). Then the memory
contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a
maximum frequency fC, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 12.
The first byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each byte of data is shift-
ed out. The whole memory can, therefore, be read
with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest ad-
dress is reached, the address counter rolls over to
000000h, allowing the read sequence to be contin-
ued indefinitely.
The
Read
Data
Bytes
at
Higher
Speed
(FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driv-
en High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
Figure 12. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out
Sequence
Note: Address bits A23 to A17 are Don’t Care.
C
D
AI04006
S
Q
23
2
1
3456789 10
28 29 30 31
22 21
3210
High Impedance
Instruction
24 BIT ADDRESS
0
C
D
S
Q
32 33 34
36 37 38 39 40 41 42 43 44 45 46
765432
0
1
DATA OUT 1
Dummy Byte
MSB
7
6543210
DATA OUT 2
MSB
7
47
765432
0
1
35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M45PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M464S3354BTS-C7A | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| M470T5663EH3-CF7 | DDR DRAM MODULE, ZMA200 |
| M470T6464EHS-CE6 | DDR DRAM MODULE, ZMA200 |
| M470T6464EHS-LF7 | DDR DRAM MODULE, ZMA200 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M45PE10-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMS6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M45PE16 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
| M45PE16-VMP6G | 功能描述:閃存 16 Mbit low-voltage RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE16-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。