參數(shù)資料
型號: M45PE10-VMP6TG
廠商: 意法半導(dǎo)體
元件分類: FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 34/34頁
文件大?。?/td> 454K
代理商: M45PE10-VMP6TG
9/34
M45PE10
MEMORY ORGANIZATION
The memory is organized as:
512 pages (256 bytes each).
131,072 bytes (8 bits each)
2 sectors (512 Kbits, 65536 bytes each)
Each page can be individually:
programmed (bits are programmed from 1 to
0)
erased (bits are erased from 0 to 1)
written (bits are changed to either 0 or 1)
The device is Page or Sector Erasable (bits are
erased from 0 to 1).
Table 3. Memory Organization
Figure 6. Block Diagram
Sector
Address Range
1
10000h
1FFFFh
0
00000h
0FFFFh
AI07405
S
W
Control Logic
High Voltage
Generator
I/O Shift Register
Address Register
and Counter
256 Byte
Data Buffer
256 Bytes (Page Size)
X Decoder
Y
Decoder
C
D
Q
Status
Register
00000h
1FFFFh
000FFh
Reset
10000h
First 256 Pages can
be made read-only
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