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參數(shù)資料
| 型號： | M45PE10-VMP6TG |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 14/34頁 |
| 文件大小： | 454K |
| 代理商： | M45PE10-VMP6TG |
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M45PE10
Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-
down mode, all instructions are ignored except the
Release from Deep Power-down (RDP) instruc-
tion. Executing this instruction takes the device out
of the Deep Power-down mode.
The Release from Deep Power-down (RDP) in-
struction is entered by driving Chip Select (S) Low,
followed by the instruction code on Serial Data In-
put (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 18..
The Release from Deep Power-down (RDP) in-
struction is terminated by driving Chip Select (S)
High. Sending additional clock cycles on Serial
Clock (C), while Chip Select (S) is driven Low,
cause the instruction to be rejected, and not exe-
cuted.
After Chip Select (S) has been driven High, fol-
lowed by a delay, tRDP, the device is put in the
Standby Power mode. Chip Select (S) must re-
main High at least until this period is over. The de-
vice waits to be selected, so that it can receive,
decode and execute instructions.
Any Release from Deep Power-down (RDP) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
Figure 18. Release from Deep Power-down (RDP) Instruction Sequence
C
D
AI06807
S
2
1
34567
0
tRDP
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M45PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M464S3354BTS-C7A | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| M470T5663EH3-CF7 | DDR DRAM MODULE, ZMA200 |
| M470T6464EHS-CE6 | DDR DRAM MODULE, ZMA200 |
| M470T6464EHS-LF7 | DDR DRAM MODULE, ZMA200 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M45PE10-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| M45PE10-VMS6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M45PE16 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
| M45PE16-VMP6G | 功能描述:閃存 16 Mbit low-voltage RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M45PE16-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
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