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參數(shù)資料
| 型號： | M364E0883CJ0-C50 |
| 元件分類： | DRAM |
| 英文描述： | 8M X 64 EDO DRAM MODULE, 50 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 15/22頁 |
| 文件大小： | 472K |
| 代理商： | M364E0883CJ0-C50 |
DRAM MODULE
M364E080(8)3CJ(T)0-C
Tolerances :
±.005(.13) unless otherwise specified
The used device is 8Mx8 DRAM with EDO mode, SOJ or TSOPII.
DRAM Part No. : M364E0803CJ(T)0 - K4E640811C-J, K4E640811C-T
M364E0883CJ(T)0 - K4E660811C-J, K4E660811C-T
PACKAGE DIMENSIONS
5.250
5.014
Units : Inches (millimeters)
R 0.079
(R 2.000)
0.250
(6.350)
1.450
(36.830)
2.150
(54.61)
0.350
0
.1
0
M
in
(2
.5
4
0
M
in
)
0
.7
0
(1
7
.7
8
0
)
.118DIA
±.004
(3.000DIA
±.100)
(8.890)
A
B
C
0.250
(6.350)
.450
(11.430)
4.550
(115.57)
0.157
±0.004
(4.000
±0.100)
0.054
(1.372)
(127.350)
(133.350)
1
.2
5
0
(3
1
.7
5
)
0.118
(3.000)
0
.1
1
8
(3
.0
0
)
0.100Max
(2.54Max)
0.050
±0.0039
(1.270
±0.10)
TSOPII
0.200Max
(5.08Max)
SOJ
0
.1
6
5
M
in
(4
.1
9
M
in
)
( Back view )
( Front view )
0.050
0.039
±.002
0.01Max
(0.25 Max)
(1.000
±.050)
(1.270)
0
.1
0
M
in
(2
.5
4
0
M
in
)
Detail C
0.250
(6.350)
Detail A
0.1230
±.0050
(3.125
±.125)
Detail B
0.079
±.0040
(2.000
±.100)
0.250
(6.350)
0.1230
±.0050
(3.125
±.125)
0.079
±.004
(2.000
±.100)
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| M368L3324BTM-CB3 | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M364FAN | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:5x7 mm, 3.3 Volt, HCMOS/TTL, Surface Mount Oscillator |
| M364FCN | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:5x7 mm, 3.3 Volt, HCMOS/TTL, Surface Mount Oscillator |
| M364TAN | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:5x7 mm, 3.3 Volt, HCMOS/TTL, Surface Mount Oscillator |
| M364TCN | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:5x7 mm, 3.3 Volt, HCMOS/TTL, Surface Mount Oscillator |
| M365145 | 制造商:HARRIS 功能描述:NEW |
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