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參數資料
| 型號： | M29DW324DT90ZA6F |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PBGA63 |
| 封裝： | 7 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-63 |
| 文件頁數： | 45/50頁 |
| 文件大?。?/td> | 878K |
| 代理商： | M29DW324DT90ZA6F |
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M29DW324DT, M29DW324DB
SUMMARY DESCRIPTION
The M29DW324D is a 32 Mbit (4Mb x8 or 2Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode.
The device features an asymmetrical block archi-
tecture. The M29DW324D has an array of 8 pa-
rameter and 63 main blocks and is divided into two
Banks, A and B, providing Dual Bank operations.
While programming or erasing in Bank A, read op-
erations are possible in Bank B and vice versa.
Only one bank at a time is allowed to be in pro-
gram or erase mode. The bank architecture is
summarized in Table 2. M29DW324DT locates the
Parameter Blocks at the top of the memory ad-
dress space while the M29DW324DB locates the
Parameter Blocks starting from the bottom.
M29DW324D has an extra 32 KWord (x16 mode)
or 64 KByte (x8 mode) block, the Extended Block,
that can be accessed using a dedicated com-
mand. The Extended Block can be protected and
so is useful for storing security information. How-
ever the protection is irreversible, once protected
the protection cannot be undone.
Each block can be erased independently so it is
possible to preserve valid data while old data is
erased. The blocks can be protected to prevent
accidental Program or Erase commands from
modifying the memory. Program and Erase com-
mands are written to the Command Interface of
the memory. An on-chip Program/Erase Controller
simplifies the process of programming or erasing
the memory by taking care of all of the special op-
erations that are required to update the memory
contents. The end of a program or erase operation
can be detected and any error conditions identi-
fied. The command set required to control the
memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP48 (12x20mm),
TFBGA63 (7x11mm, 0.8mm pitch) and TFBGA48
(6x8mm, 0.8mm pitch) packages. The memory is
supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI06867B
21
A0-A20
W
DQ0-DQ14
VCC
M29DW324DT
M29DW324DB
E
VSS
15
G
RP
DQ15A–1
RB
VPP/WP
BYTE
A0-A20
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
VCC
Supply Voltage
VPP/WP
VPP/Write Protect
VSS
Ground
NC
Not Connected Internally
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M29DW324DT90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DT90ZE1 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory |
| M29DW324DT90ZE1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DT90ZE1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DT90ZE1T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory |
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