參數(shù)資料
型號(hào)： M29DW324DT90ZA6F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝： 7 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-63
文件頁數(shù)： 44/50頁
文件大?。?/td> 878K
代理商： M29DW324DT90ZA6F
49/50
M29DW324DT, M29DW324DB
REVISION HISTORY
Table 32. Document Revision History
Date
Version
Revision Details
19-Apr-2002
-01
Document written
08-Apr-2003
2.0
Revision numbering modified: a minor revision will be indicated by incrementing the digit
after the dot, and a major revision, by incrementing the digit before the dot (revision
version 01 equals 1.0).
Revision History moved to end of document.
When in Extended Block mode, the block at the boot block address can be used as OTP.
Data Toggle Flow chart corrected. Logic diagram corrected.
TFBGA48, 6x8mm, 0.8mm pitch package added. Identification Current IID removed from
Table 12., DC Characteristics. Erase Suspend Latency time and Data Retention
parameters and notes added to Table 7., Program, Erase Times and Program, Erase
read the Extended Memory Block. Extended Memory Block Verify Code row added to
Address modified in Auto Select Command. Chip Erase Address modified in Table 8.,
Status Register Bits. VSS pin connection to ground clarified. Note added to Table 21.,
07-May-2003
2.1
Outline” corrected.
25-Jun-2003
3.0
Document promoted from Preliminary Data to full Datasheet status. Packing option added
18-Sep-2003
3.1
Status of Ready/Busy signal for Erase Suspend Operation modified in Table 8., Status
Figures 15 and 16, Toggle and Alternative Toggle Bits Mechanisms added.
07-Oct-2003
3.2
Figures 15 and 16, Toggle and Alternative Toggle Bits Mechanisms modified and Notes 1
Figure 9. renamed and modified; Note added.
07-Nov-2003
3.3
Block Protection Status read modified in the Auto Select command section.
19-Dec-2003
3.4
VPP and IPP test conditions updated in Table 12., DC Characteristics.
Architecture option updated in Table 21., Ordering Information Scheme.
Block Protect/Unprotect code updated in APPENDIX B., Table 28.
Customer Lockable Extended Block mechanism modified in APPENDIX C., EXTENDED
APPENDIX D., BLOCK PROTECTION, updated: Note 1 added in the In-System
Technique section and Note 2 added below Figure 24., In-System Equipment Group
23-Mar-2004
4.0
Introduction of STATUS REGISTER section clarified.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW324DT90ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZE1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
M29DW324DT90ZE1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZE1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZE1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
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