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參數(shù)資料
| 型號(hào)： | M14C64 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Memory Card IC 64/32 Kbit Serial IC Bus EEPROM |
| 中文描述： | 記憶卡IC 64/32千位串行IC總線的EEPROM |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 126K |
| 代理商： | M14C64 |
M14C64, M14C32
10/14
Table 7. AC Characteristics
(T
A
= 0 to 70 °C; V
CC
= 2.5 V to 5.5 V)
Note: 1. For a reSTART condition, or following a write cycle.
2. Sampled only, not 100% tested
Table 8. DC Characteristics
(T
A
= 0 to 70 °C; V
CC
= 2.5 V to 5.5 V)
Symbol
Symbol
Alt.
Parameter
Fast I
2
C
400 kHz
I
2
C
100 kHz
Unit
Min
Max
Min
Max
t
CH1CH2 2
t
R
Clock Rise Time
300
1000
ns
t
CL1CL2 2
t
F
Clock Fall Time
300
300
ns
t
DH1DH2 2
t
R
SDA Rise Time
20
300
20
1000
ns
t
DL1DL2 2
t
F
SDA Fall Time
20
300
20
300
ns
t
CHDX 1
t
SU:STA
Clock High to Input Transition
600
4700
ns
t
CHCL
t
HIGH
Clock Pulse Width High
600
4000
ns
t
DLCL
t
HD:STA
Input Low to Clock Low (START)
600
4000
ns
t
CLDX
t
HD:DAT
Clock Low to Input Transition
0
0
μs
t
CLCH
t
LOW
Clock Pulse Width Low
1.3
4.7
μs
t
DXCX
t
SU:DAT
Input Transition to Clock Transition
100
250
ns
t
CHDH
t
SU:STO
Clock High to Input High (STOP)
600
4000
ns
t
DHDL
t
BUF
Input High to Input Low (Bus Free)
1.3
4.7
μs
t
CLQV
t
AA
Clock Low to Data Out Valid
1000
3500
ns
t
CLQX
t
DH
Data Out Hold Time After Clock Low
200
200
ns
f
C
f
SCL
Clock Frequency
400
100
kHz
t
W
t
WR
Write Time
10
10
ms
Parameter
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
0 V
≤
V
IN
≤
V
CC
± 2
μA
I
LO
Output Leakage Current
0 V
≤
V
OUT
≤
V
CC,
SDA in Hi-Z
± 2
μA
I
CC
Supply Current
V
CC
=5V, f
c
=400kHz (rise/fall time < 30ns)
2
mA
V
CC
=2.5V, f
c
=400kHz (rise/fall time < 30ns)
1
mA
I
CC1
Supply Current
(Stand-by)
V
IN
= V
SS
or
V
CC
, V
CC
= 5 V
20
μA
V
IN
= V
SS
or
V
CC
, V
CC
= 2.5 V
2
μA
V
IL
Input Low Voltage (SCL, SDA)
- 0.3
0.3 V
CC
V
V
IH
Input High Voltage (SCL, SDA)
0.7 V
CC
V
+ 1
V
V
IL
Input Low Voltage (WC)
- 0.3
0.5
V
V
IH
Input High Voltage (WC)
V
CC
- 0.5
V
CC
+ 1
V
V
OL
Output Low
Voltage
I
OL
= 3 mA, V
CC
= 5 V
0.4
V
I
OL
= 2.1 mA, V
CC
= 2.5 V
0.4
V
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