參數(shù)資料
型號(hào): LM4881M
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 音頻/視頻放大
英文描述: Dual 200 mW Headphone Amplifier with Shutdown Mode
中文描述: 0.3 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO8
封裝: SOIC-8
文件頁(yè)數(shù): 2/11頁(yè)
文件大小: 413K
代理商: LM4881M
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation (Note 4)
ESD Susceptibility (Note 5)
ESD Susceptibility (Note 6)
Junction Temperature
Soldering Information (Note 1)
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
6.0V
65C to +150C
0.3V to V
DD
+ 0.3V
Internally limited
3500V
250V
150C
215C
220C
Thermal Resistance
θ
JC
(MSOP)
θ
JA
(MSOP)
θ
JC
(SOP)
θ
JA
(SOP)
θ
JC
(DIP)
θ
JA
(DIP)
56C/W
210C/W
35C/W
170C/W
37C/W
107C/W
Operating Ratings
Temperature Range
T
MIN
T
A
T
MAX
Supply Voltage
Note 1:
See AN-450 “Surface Mounting and their Effects on Product Reli-
ability” for other methods of soldering surface mount devices.
40C
T
A
85C
2.7V
V
DD
5.5V
Electrical Characteristics
(Notes 2, 3)
The following specifications apply for V
DD
= 5V unless otherwise specified. Limits apply for T
A
= 25C.
Symbol
Parameter
Conditions
LM4881
Units (Limits)
Typ
(Note 7)
Limit
(Note 8)
2.7
5.5
6.0
5
50
V
DD
Power Supply Voltage
V (min)
V (max)
mA (max)
μA (max)
mV (max)
I
DD
I
SD
V
OS
P
O
Quiescent Current
Shutdown Current
Offset Voltage
Output Power
V
IN
= 0V, I
O
= 0A
V
PIN1
= V
DD
V
IN
= 0V
THD = 0.1% (max); f = 1 kHz;
R
L
= 8
R
L
= 16
R
L
= 32
THD + N = 10%; f = 1 kHz;
R
L
= 8
R
L
= 16
R
L
= 32
R
L
= 16
, P
O
= 120 mWrms;
R
L
= 32
, P
O
= 75 mWrms;
f = 1 kHz
C
B
= 1.0 μF, V
RIPPLE
= 200
mVrms, f = 120Hz
3.6
0.7
5
200
150
85
125
mW (min)
mW
mW
300
200
110
0.025
0.02
mW
mW
mW
%
%
THD+N
Total Harmonic Distortion +
Noise
PSRR
50
dB
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