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參數(shù)資料
| 型號： | LE28F4001M-15 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 219K |
| 代理商： | LE28F4001M-15 |
Product Identifier
Product identifier read is a mode provided so that applications can confirm that the device was manufactured by SANYO
Electric Co., Ltd. This mode can be accessed by both hardware and software operations. A ROM writer is normally used
with this hardware operation to recognize the correct algorithm for the SANYO LE28F4001 Series. We recommend that
user use the software operation for recognizing this device. The “Functional Logic” section describes the hardware
operation in detail. The manufacturer and device code are accessed in the same manner.
Decoupling Capacitors
Ceramic capacitors (0.1 μF) must be added between V
CC
and V
SS
for each device to assure stabile flash memory
operation.
Absolute Maximum Ratings
at Ta = 25°C
Note: 1. Stresses greater than the above listed maximum values may result in damage to the device.
2. –1.0 to V
CC
+ 1.0 V for pulse widths less than 20 ns.
3. –1.0 to V
CC
+ 14.0 V for pulse widths less than 20 ns.
4. Ta = 25 °C
DC Recommended Operating Ranges
at Ta = 0 to +70°C, V
CC
= 5 V ± 10%
DC Electrical Characteristics
at Ta = 0 to +70°C, V
CC
= 5 V ± 10%
Input/Output Capacitances
at Ta = 25°C, V
CC
= 5 V ± 10%, f = 1 MHz
Power on Timing
No. 5239-7/14
LE28F4001M, T, R-15/20
Parameter
Symbol
Ratings
Unit
Note
Supply voltage
V
CC
V
IN
V
I/O
V
A9
Pd max
–0.5 to +6.0
V
1
Input pin voltage
–0.5 to V
CC
+ 0.5
–0.5 to V
CC
+ 0.5
–0.5 to +14.0
V
1, 2
DQ pin voltage
V
1, 2
A9 pin voltage
V
1, 3
Power dissipation
600
mW
1, 4
Operating temperature
Topr
0 to +70
°C
1
Storage temperature
Tstg
–65 to +150
°C
1
Parameter
Symbol
min
typ
max
Unit
Supply voltage
V
CC
V
IL
V
IH
4.5
5.0
5.5
V
Input low-level voltage
0.8
V
Input high-level voltage
2.0
V
Parameter
Symbol
Conditions
min
typ
max
Unit
CE = OE = V
IL
, WE = V
IH
, all DQ pins open,
Address inputs = V
IH
or V
IL
, operating frequency =
1/t
RC
(minimum), V
CC
= V
CC
max
CE = WE = V
IL
, OE = V
IH
, V
CC
= V
CC
max
CE = V
IH
, V
CC
= V
CC
max
CE = V
CC
– 0.3 V, V
CC
= V
CC
max
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
I
OL
= 2.1 mA, V
CC
= V
CC
min
I
OH
= –400 μA, V
CC
= V
CC
min
Current drain during read
I
CCR
25
mA
Current drain during write
I
CCW
I
SB1
I
SB2
I
LI
I
LO
V
OL
V
OH
40
mA
TTL standby current
3
mA
CMOS standby current
20
μA
Input leakage current
10
μA
Output leakage current
10
μA
Output low-level voltage
0.4
V
Output high-level voltage
2.4
V
Parameter
Symbol
Conditions
max
Unit
I/O capacitance
C
DQ
C
IN
V
DQ
= 0 V
V
IN
= 0 V
12
pF
Input capacitance
6
pF
Parameter
Symbol
max
Unit
Time from power on until first read operation
t
PU-READ
t
PU-WRITE
10
ms
Time from power on until first write operation
10
ms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| LE28F4001R | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4 MEG (524288 words x 8 bits) Flash Memory |
| LE28F4001R-15 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4 MEG (524288 words x 8 bits) Flash Memory |
| LE28F4001R-20 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4 MEG (524288 words x 8 bits) Flash Memory |
| LE28F4001T | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4 MEG (524288 words x 8 bits) Flash Memory |
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