
Ordering number : EN
*
5239A
63096HA (OT) No. 5239-1/14
Overview
The LE28F4001 Series ICs are 524288-word
×
8-bit flash
memory products that support on-board reprogramming
and feature 5 V single-voltage power supply operation.
CMOS peripheral circuits were adopted for high speed,
low power, and ease of use. These products support a
sector (256 bytes) erase function for fast data rewriting.
Features
Fabricated in a highly reliable 2-layer polysilicon
CMOS flash EEPROM process.
Read and write operation from a 5 V single-voltage
power supply
Sector erase function: 256 bytes per sector
Fast access time: 150/200 ns
Low power
— Operating current (read): 25 mA (maximum)
— Standby current: 20 μA (maximum)
Highly reliable read and write operations
— Sector write cycles: 10
4
cycles
— Data retention time: 10 years
Address and data latches
Self-timer erase and programming
Byte programming time: 35 μs (maximum)
Write complete detection: Toggle bit and data polling
Hardware and software data protection
Pin assignment conforms to the JEDEC byte-wide
EEPROM standard
Packages
SOP 32-pin
(525 mil) plastic package
TSOP 40-pin (10
×
14 mm) plastic package:LE28F4001T
TSOP 40-pin (10
×
14 mm) plastic package:LE28F4001R
:LE28F4001M
Package Dimensions
unit: mm
3205-SOP32
unit: mm
3087A-TSOP40
Preliminary
SANYO: SOP32
[LE28F4001M]
SANYO: TSOP40 (TYPE-I)
[LE28F4001T, R]
LE28F4001M, T, R-15/20
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4 MEG (524288 words
×
8 bits) Flash Memory
CMOS LSI
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.