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參數(shù)資料
| 型號(hào)： | LE28FV4001T |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 4MEG (52488 x 8 Bits) Flash Memory |
| 中文描述： | 4MEG（52488 × 8位）閃存 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 230K |
| 代理商： | LE28FV4001T |
Ordering number : EN
*
5468
22897HA(OT) No. 5468-1/14
Overview
The LE28FV4001M, T, R Series are 4 MEG flash
memory products that feature a 542488-word
×
8-bit
organization and 3.3 V single-voltage power supply
operation. CMOS peripheral circuits were adopted for
high speed, low power, and ease of use. The
LE28FV4001M also supports high-speed data rewriting
by providing a sector (256 bytes) erase function.
Features
Highly reliable 2 layer polysilicon CMOS flash
EEPROM process
Read and write operations using a 3.3 V single-voltage
power supply
High-speed access: 200 and 250 ns
Low power
— Operating (read): 10 mA (maximum)
— Standby: 20 μA (maximum)
Highly reliable read write
—Number of sector write cycles: 10
4
cycles
— Data retention: 10 years
Address and data latches
Sector erase function: 256 bytes per sector
Self-timer erase/program
Byte program time: 35 μs (maximum)
Write complete detection function: Toggle bit/Data
poling
Hardware and software data protection functions
Pin assignment conforms to the JEDEC byte-wide
EEPROM standard.
Package
SOP 32-pin (525 mil) plastic package: LE28FV4001M
TSOP 42-pin (10
×
14 mm) plastic package:LE28FV4001T
TSOP 40-pin (10
×
14 mm) plastic package: LE28FV4001R
Package Dimensions
unit: mm
3205-SOP32
unit: mm
3087A-TSOP40
Preliminary
SANYO: SOP32
[LE28FV4001M. T, R]
SANYO: TSOP40 (TYPE-I)
[LE28FV4001M. T, R]
LE28FV4001M, T, R-20/25
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4MEG (52488
×
8 Bits) Flash Memory
CMOS LSI
These FLASH MEMORY products incorporate technology licensed from Silicon Storage Technology, Inc.
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