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參數(shù)資料
| 型號： | K6L0908V2A-TD850 |
| 元件分類： | SRAM |
| 英文描述： | 64K X 8 STANDARD SRAM, 85 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP1-32 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 193K |
| 代理商： | K6L0908V2A-TD850 |
K6L0908V2A, K6L0908U2A Family
CMOS SRAM
Revision 3.0
February 1998
2
64Kx8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6L0908V2A and K6L0908U2A families are fabricated
by SAMSUNG
′s advanced CMOS process technology. The
families support various operating temperature ranges and
have various package types for user flexibility of system
design. The family also support low data retention voltage for
battery back-up operation with low data retention current.
FEATURES
Process Technology: Poly Load
Organization: 64Kx8
Power Supply Voltage
K6L0908V2A family: 2.7~3.3V
K6L0908U2A family: 3.0~3.3V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-SOP-525, 32-TSOP1-0820F,
32-TSOP1-0813.4F
PIN DESCRIPTION
Name Name
Function
CS1,CS2
Chip Select Inputs
OE
Output Enable Input
WE
Write Enable Input
A0~A15
Address Inputs
I/O1~I/O8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
VCC Range
Speed
Power Dissipation
PKG Type
Standby
(Isb1, Max)
Operating
(Icc2, Max)
K6L0908V2A-B
Commercial(0~70
°C)
3.0 ~ 3.6V
701)/85/100ns
10
A
40mA
32-SOP
32-TSOP1-F
32-sTSOP1-F
K6L0908U2A-B
2.7 ~ 3.3V
851)/100ns
10
A
K6L0908V2A-D
Extended(-25~85
°C)
3.0 ~ 3.6V
701)/85/100ns
20
A
K6L0908U2A-D
2.7 ~ 3.3V
851)/100ns
15
A
K6L0908V2A-F
Industrial (-40~85
°C)
3.0 ~ 3.6V
701)/85/100ns
20
A
K6L0908U2A-F
2.7 ~ 3.3V
851)/100ns
15
A
FUNCTIONAL BLOCK DIAGRAM
32-TSOP
Type1 - Forward
(8mm x 20mm)
(8mm x 13.4mm)
32-SOP
N.C
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
CS2
A11
A9
A8
A13
WE
CS2
A15
VCC
N.C
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A11
A9
A8
A13
WE
CS2
A15
VCC
N.C
A14
A12
A7
A6
A5
A4
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
512 rows
128
×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1
A2
A3
A9
A11
A10
A4
A5
A6
A7
A8
A12
A14
CS1
CS2
WE
I/O1
Data
cont
Data
cont
OE
I/O8
A13
A15
32-sTSOP
Type1 - Forward
Control
logic
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