參數(shù)資料
型號: JANTXV2N5339
英文描述: TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-39
中文描述: 晶體管|晶體管|叩| 100V的五(巴西)總裁| 5A條一(c)| TO - 39封裝
文件頁數(shù): 9/20頁
文件大小: 128K
代理商: JANTXV2N5339
MIL-PRF-19500/560E
17
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2. Sampling oscilloscope: Zin ≥ 1 M, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: IC = 2 A, IB1 = 200 mA.
FIGURE 6. Saturated turn-on switching waveform and time test circuit.
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2. Sampling oscilloscope: Zin ≥ 1 M, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: CI = 2 A, IB1 = IB2 = 200 mA.
FIGURE 7. Saturated turn-off switching time waveform and test circuit.
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