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參數(shù)資料
| 型號： | JANTXV2N5339 |
| 英文描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-39 |
| 中文描述： | 晶體管|晶體管|叩| 100V的五（巴西）總裁| 5A條一（c）| TO - 39封裝 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANTXV2N5339 |
MIL-PRF-19500/560E
10
4.3 Screening (JAN, JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
Measurements
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
*
3C
Thermal impedance method 3131 of
MIL-STD-750.
Thermal impedance method 3131 of
MIL-STD-750.
9
ICBO1 and hFE2
Not applicable
11
ICBO1; hFE2,
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
ICBO1 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
Subgroup 2 of table I herein;
I
CBO1 = ± 100 percent of initial value or
1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the
general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve TJ = minimum 175°C
and minimum power dissipation of PD = 75 percent PT max as defined in 1.3.
* 4.3.2 Screening for JANHC and JANKC. Screening for JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 Discrete Semiconductor Die/Chip Lot Acceptance. Burn-in duration for JANKC level follows JANS
requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500
and table I herein. Electrical measurements (end-points) requirements shall be in accordance with group A,
subgroup 2 herein.
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| JANTXV2N5339U3 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N5415 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTXV2N5415S | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTXV2N5415UA | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 4-Pin UA 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANTXV2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 3PIN TO-5 - Bulk |
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