參數(shù)資料
型號: JANTXV2N5339
英文描述: TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-39
中文描述: 晶體管|晶體管|叩| 100V的五(巴西)總裁| 5A條一(c)| TO - 39封裝
文件頁數(shù): 3/20頁
文件大?。?/td> 128K
代理商: JANTXV2N5339
MIL-PRF-19500/560E
11
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points)
shall be in accordance with group A, subgroup 2 herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500 for
JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be in
accordance with group A, subgroup 2 herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B4
1037
VCB ≥ 10 V dc.
B5
1027
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample.) VCB = 10 V dc; PD ≥ 100 percent of rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table Via, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust adjust TA or PD to
achieve TJ = +225°C minimum.
B5
2037
Test condition A.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Condition
*
1
1027
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall
be applied to the device to achieve TJ = +175°C minimum, and minimum power
dissipation of 75 percent of max rated PT (see 1.3 herein); n = 45, C = 0.
2
1027
The steady-state life test of step 1 shall be extended to 1,000 hours for each die
design. Samples shall be selected from a wafer lot every twelve months of wafer
production. Group B step 2 shall not be required more than once for any single
wafer lot. n = 45, C = 0.
3
1032
High- temperature life (non-operating), T
A = +200°C, t = 340 hours, n = 22,
C = 0.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein.
相關(guān)PDF資料
PDF描述
JANKCA1N6677 0.2 A, SILICON, SIGNAL DIODE, DO-35
JANSF2N7261 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
JANSF2N7262 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
JANSF2N7269 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
JANSF2N7269U 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N5339U3 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk
JANTXV2N5415 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk
JANTXV2N5415S 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk
JANTXV2N5415UA 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 4-Pin UA 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk
JANTXV2N5416 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 3PIN TO-5 - Bulk