- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384552 > JANSF2N7467U2 (International Rectifier) RADIATION HARDENED POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | JANSF2N7467U2 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET |
| 中文描述： | 抗輻射功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 134K |
| 代理商： | JANSF2N7467U2 |
www.irf.com
3
IRHNA57Z60, JANSR2N7467U2
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 — 30 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA
R
DS(on)
Static Drain-to-Source
— 0.004 — 0.0045
V
GS
= 12V, I
D
=45A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.0035 — 0.004
V
GS
= 12V, I
D
=45A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
— 1.3 — 1.3 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=24V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHNA57Z60 (JANSR2N7467U2), IRHNA53Z60 (JANSF2N7467U2) and IRHNA54Z60 (JANSG2N7467U2)
2. Part number IRHNA58Z60 (JANSH2N7467U2)
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Cu
28
261 40 30 30 30 25 15
Br
37
285 37 30 30 30 23 15
I
60
344 33 25 25 20
LET
Energy Range
V
DS
(V)
15
8
0
5
10
15
20
25
30
35
-20
-15
-10
-5
0
VGS
V
Cu
Br
I
相關PDF資料 |
PDF描述 |
|---|---|
| JANSG2N7467U2 | RADIATION HARDENED POWER MOSFET |
| JANSH2N7467U2 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7467U2 | RADIATION HARDENED POWER MOSFET |
| JANSF2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSG2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANSF2N7469U2 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7470T1 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7471T1 | 制造商:International Rectifier 功能描述:RAD- HARDENED 100V, P CHANNEL POWER MOSFET - Rail/Tube |
| JANSF2N7475T1 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7479U3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。