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參數(shù)資料
| 型號(hào)： | JANSF2N7467U2 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET |
| 中文描述： | 抗輻射功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 134K |
| 代理商： | JANSF2N7467U2 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
75*
75*
300
250
2.0
±20
500
75
25
0.83
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
RADIATION HARDENED JANSR2N7467U2
POWER MOSFET 30V, N-CHANNEL
SURFACE MOUNT (SMD-2)
REF: MIL-PRF-19500/683
www.irf.com
1
* Current is limited by package
For footnotes refer to the last page
SMD-2
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA57Z60 100K Rads (Si) 0.0035
75A* JANSR2N7467U2
IRHNA53Z60 300K Rads (Si) 0.0035
75A*
IRHNA54Z60 500K Rads (Si) 0.0035
75A*
IRHNA58Z60 1000K Rads (Si) 0.0040
75A*
I
D
QPL Part Number
JANSF2N7467U2
JANSG2N7467U2
JANSH2N7467U2
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
IRHNA57Z60
TECHNOLOGY
PD - 91787H
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|---|---|
| JANSG2N7467U2 | RADIATION HARDENED POWER MOSFET |
| JANSH2N7467U2 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7467U2 | RADIATION HARDENED POWER MOSFET |
| JANSF2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSG2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
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| JANSF2N7471T1 | 制造商:International Rectifier 功能描述:RAD- HARDENED 100V, P CHANNEL POWER MOSFET - Rail/Tube |
| JANSF2N7475T1 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7479U3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
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