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參數(shù)資料
| 型號： | JANSF2N7470T1 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 182K |
| 代理商： | JANSF2N7470T1 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
45*
45*
180
208
1.67
±20
824
45
20
4.3
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
o
C
A
www.irf.com
1
* Current is limited by package
For footnotes refer to the last page
Pre-Irradiation
TO-254AA
Low-Ohmic
Features:
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
IRHMS57064
RADIATION HARDENED JANSR2N7470T1
POWER MOSFET 60V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
REF: MIL-PRF-19500/698
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHMS57064 100K Rads (Si) 0.0066
45A*
IRHMS53064 300K Rads (Si) 0.0066
45A*
IRHMS54064 500K Rads (Si) 0.0066
45A*
IRHMS58064 1000K Rads (Si) 0.0066
45A*
QPL Part Number
JANSR2N7470T1
JANSF2N7470T1
JANSG2N7470T1
JANSH2N7470T1
PD-95838B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSG2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSH2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSR2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSF2N7482T3 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| JANSG2N7482T3 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
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