參數(shù)資料
型號： IXTR200N10P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarTM HiPerFET Power MOSFET
中文描述： 120 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 119K
代理商： IXTR200N10P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
IXTR 200N10P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 100 A, Note 1
60
97
S
C
iss
C
oss
C
rss
7600
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2900
pF
860
pF
t
d(on)
t
r
t
d(off)
t
f
30
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 3.3
(External)
35
ns
150
ns
90
ns
Q
g(on)
Q
gs
Q
gd
240
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 100 A
50
nC
135
nC
R
thJC
R
thCK
.42 K/W
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
200
A
I
SM
Repetitive
400
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
I
F
= 25 A, dI/dt = 100 A/
μ
s
100
140
ns
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
ISOPLUS 247 OUTLINE
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
e 5.45 BSC
L
19.81
L1
3.81
Q
5.59
R
4.32
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
A
A
1
A
2
b
b
1
b
2
C
D
E
20.32
4.32
6.20
4.83
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Notes: 1. Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
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