參數(shù)資料
型號(hào)： IXTT10P50
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated
中文描述： 10 A, 500 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 123K
代理商： IXTT10P50
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
-500
-500
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
10P50
11P50
10P50
11P50
10P50
11P50
-10
-11
-40
-44
-10
-11
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
J
I
AR
T
C
= 25
°
C
E
AR
T
C
= 25
°
C
T
C
= 25
°
C
30
mJ
P
D
300
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Weight
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
= -250
μ
A
BV
DSS
Temperature Coefficient
-500
V
0.054
%/K
V
GS(th)
V
DS
= V
, I
= -250
μ
A
V
GS(th)
Temperature Coefficient
-3.0
-5.0
V
-0.122
%/K
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
-200
μ
A
mA
-1
R
DS(on)
V
GS
= -10 V, I
D
= 0.5 I
D25
10P50
11P50
0.90
0.75
0.6
R
DS(on)
Temperature Coefficient
%/K
94535F (7/02)
TO-247 AD (IXTH)
G = Gate
S = Source
D = Drain
TAB = Drain
TO-268 (IXTT) Case Style
(TAB)
G
S
Features
z
International standard packages
z
Low R
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
D
V
DSS
I
D25
R
DS(on)
IXTH/IXTT 10P50
IXTH/IXTT 11P50
-500 V -10 A 0.90
-500 V -11 A
0.75
(TAB)
D
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