參數資料
型號： IXTR200N10P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarTM HiPerFET Power MOSFET
中文描述： 120 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數： 1/5頁
文件大小： 119K
代理商： IXTR200N10P
2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
100
V
100
V
V
GS
V
GSM
±
20
±
30
V
V
I
D25
I
D(RMS)
I
DM
T
C
= 25
°
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
133
A
75
A
400
A
I
AR
60
A
E
AR
E
AS
100
mJ
4
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
350
W
-55 ... +175
°
C
°
C
°
C
175
-55 ... +150
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting Force
20..120/4.6..20
Nm/lb
Weight
5
g
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 500
μ
A
3.0
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 0 V
25
μ
A
μ
A
μ
A
T
J
= 150
°
C
T
J
= 175
°
C
250
1000
R
DS(on)
V
GS
= 10 V, I
D
= 60 A
V
GS
= 15 V, I
D
= 400A
8.0
m
m
5.5
DS99365(06/05)
Polar
TM
HiPerFET
Power MOSFET
Electrically Isolated Tab
IXTR 200N10P
Advanced Technical Information
N-Channel Enhancement Mode
Fast Recovery Diode, Avavanche Rated
V
DSS
I
D25
R
DS(on)
= 8
= 100 V
= 133 A
m
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
z
Avalanche voltage rated
z
Fast recovery intrinsic diode
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
ISOPLUS 247
TM
E153432
G = Gate
S = Source
D = Drain
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